• TOSHNIWAL SENSING DEVICES PVT LTD.

LED Photo Diode Photo Transistor

LED Photo Diode Photo Transistor

LED Photo Diode Photo Transistor

Product Ordered On Demand Only

LED Features:

1. Save money and energy. LEDs (light emitting diodes) are solid-state semiconductor devices that can convert electrical energy directly into light. Generally, a LED consumes less than 0.1 watts to operate. This low power consumption means you save on your energy costs.

2. Low heat output. LEDs can convert almost all the energy used into light creating a highly efficient light source. In contrast, today incandescent bulbs emit a lot of energy in the infrared spectrum which can not be seen. We know this wasted energy as the heat today bulbs  give off. 

3. Long life time. A LED can last up to 100,000 hours. In comparison an incandescent lifetime is about 1,000 hours and a halogen is about  2,000   hours. 

4. Environmentally safe. LEDs are made from non-toxic materials unlike fluorescents which contain Mercury. Can also be  recycled. Durable.     No loose or moving parts.

LED Specification:

Maximum Ratings (T=25°C)

Parameter

Symbol

Min.

Max.

Unit

Test Condition

Reverse Voltage

VR

5

--

V

IR=30 µ A

Forward Current

IF

--

30

mA

--

Power Dissipation

Pd

--

108

mW

--

Pulse Current

Ipeak

--

100

mA

Duty=0.1mS,1kHz

Operating Temperature

Topr

-20

+85

° C

--

Storage Temperature

Tstr

-25

+100

° C

--

 

Electro-optical Characteristics (T=25°C )

Parameter

Symbol

Min.

Max.

Type

Unit

Test Condition

Forward Voltage

VF

--

3.6

3.2

V

IF=20mA

Reverse Current

IR

--

30

--

μA

VR=5V

Luminous Intensity

IV

--

--

BIN

mcd

IF=20mA

Viewing Angle

2 θ 1/2

23

30

--

Deg.

IF=20mA

 

Applications of LED

 1. In traffic light Indicators, signs and signals.

 2. In data displaying boards.

 3. In medical applications and toys

 4. Non visual applications.

 5. In light bulbs and many more.

 6. Remote controls.

 7. In motor vehicles and bicycle lights.

PhotoTransistor Features:

1. Low-cost visible and near-IR photo detection.

2. Available with gains from 100 to over 1500.

3. Moderately fast response times.

4. Available in a wide range of packages including epoxy-coated, transfer-molded and surface mounting technology.

5. Electrical characteristics similar to that of signal transistors.

 

                                                         

Photo Transistor Specification :

 

Maximum Ratings (T=25°C)

Parameter

Symbol

Rating

Unit

Collector-Emitter Voltage

VCEO

30

V

Emitter-Collector-Voltage

VCEO

5

V

Collector Current

IC

20

mW

Operating Temperature

Topr

-25 ~ +85° 

° C

Storage Temperature

Tstg

-40 ~ +85° 

° C

Lead Soldering Temperature(*1)

Tsol

260

° C

Power Dissipation at (or below) 25? Free Air Temperature

Pc

75

mW

 

Notes: *1:Soldering time<=5 seconds.

Electro-optical Characteristics (T=25°C)

Parameter

Symbol

Test Condition

Min.

Type

Max.

Units

Collector – Emitter Breakdown Voltage

BVCEO

IC=100μA Ee=0mW/cm2

30

--

--

V

Emitter-Collector Breakdown Voltage

BVECO

IE=100μA Ee=0mW/cm2

5

--

--

V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=2mA Ee=1mW/cm2

--

--

0.4

V

Rise Time

tr

VCE=5V IC=1mA RL=1000Ω

--

15

--

μS

Fall Time

tf

--

15

--

Collector Dark Current

ICEO

Ee=0mW/cm2 VCE=20V

--

--

100

nA

On State Collector Current

IC(on)

Ee=1mW/cm2 VCE=5V

0.7

4.0

--

mA

Wavelength of Peak Sensitivity

λp

--

--

940

--

Nm

Rang of Spectral Bandwidth

Λ0.5

--

--

400-1100

--

nm

 

Applications of PhotoTransistor:

1. Punch-card readers.

2. Security systems

3. Encoders – measure speed and direction

4. IR detectors photo

5. electric controls

6. Computer logic circuitry.

7. Relays

8. Lighting control (highways etc)

9. Level indication

10. Counting systems

 

Photodiode  Features:

1. Low cost

2. Temperature sensitive

3. Digital in nature

4. Unidirectional

5. Quicker response time

 

 

Photodiode Specification :

Maximum Ratings (T=25°C)

Parameter

Symbol

Rating

Unit

Reverse  Voltage

VR

32

V

Operating Temperature

Topr

-25 ~ +85° 

°C

Storage Temperature

Tstg

-40 ~ +100° 

°C

Soldering Temperature

Tsol

260

° C

Power Dissipation at (or below) 25? Free Air Temperature

Pc

150

mW

 

 

Electro-optical Characteristics (T=25°C)

Parameter

Symbol

Min.

Type

Max.

Unit

Test Condition

Range Of Spectral Bandwidth

λ0.5

400

--

100

nm

--

Wavelength Of Peak Sensitivity

λP

--

940

--

nm

--

Open-Circuit Voltage

VOC

--

0.39

--

V

Ee=1mW/cm2 λp=940nm

Short- Circuit Current

ISC

--

40

--

μA

Ee=1mW/cm2 λp=940nm

Reverse Light Current

IL

36

40

--

μA

Ee=1mW/cm2 λp=940nm VR=5V

Reverse Dark Current

ID

--

5

30

nA

Ee=0mW/cm2 VR=10V

Reverse Breakdown Voltage

VBR

32

170

--

V

Ee=0mW/cm2 IR=100μA

Total Capacitance

Ct

--

18

--

pF

Ee=0mW/cm2 VR=5V f=1MHz

Rise Time/ Fall Time

tr/ / tf

--

45/45

--

ns

VR=10V RL=100Ω

View Angle

2θ1/2

--

80

--

deg

IF=20mA

 

Note: Tolerance of Luminous Intensity: ±10%

 Tolerance of Dominant Wavelength: ±1nm

 Tolerance of Forward Voltage: ±0.1V

 

Applications of Photodiode:

1. The applications of photodiodes involve in similar applications of photodetectors like charge-coupled devices, photoconductors, and photomultiplier tubes.

2. These diodes are used in consumer electronics devices like smoke detectors, compact disc players, and televisions and remote controls in VCRs.

3. In other consumer devices like clock radios, camera light meters, and street lights, photoconductors are more frequently used rather than photodiodes.

4. Photodiodes are frequently used for exact measurement of the intensity of light in science & industry. Generally, they have an enhanced, more linear response than photoconductors.

5. Photodiodes are also widely used in numerous medical applications like instruments to analyze samples, detectors for computed tomography and also used in blood gas monitors.

6. These diodes are much faster & more complex than normal PN junction diodes and hence are frequently used for lighting regulation and in optical communications.

 

 

 

 

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